Stack packages including supporter

ABSTRACT

A stack package is disclosed. A first semiconductor die and a supporter are disposed on a package substrate. The supporter may include a second side facing a first side of the first semiconductor die having a substantially inclined surface. A second semiconductor die is stacked on the first semiconductor die and on the supporter. An encapsulant layer is formed to fill a portion between the supporter and the first semiconductor die.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C. 119(a) to KoreanApplication No. 10-2020-0130909, filed on Oct. 12, 2020, which isincorporated herein by reference in its entirety.

BACKGROUND 1. Technical Field

The present disclosure generally relates to a packaging technology and,more particularly, to stack packages including supporters.

2. Related Art

Various attempts have been made to integrate a plurality ofsemiconductor dies into one package structure. A stack package structurein which another semiconductor die is vertically stacked on onesemiconductor die has been proposed. While a plurality of elements areembedded in the stack package, a gap between the embedded elements maybe filled with an encapsulant.

SUMMARY

An aspect of the present disclosure presents a stack package including:a first semiconductor die disposed on a package substrate; a supporterdisposed on the package substrate and having a second side facing afirst side of the first semiconductor die, the second side having asubstantially inclined surface; a second semiconductor die stacked onthe first semiconductor die and on the supporter; and an encapsulantlayer filling a portion between the supporter and the firstsemiconductor die.

An aspect of the present disclosure presents a stack package including:a first semiconductor die disposed on a package substrate; a supporterdisposed on the package substrate and having a second side facing afirst side of the first semiconductor die, the second side including afirst sub-side portion and a second sub-side portion that form astaircase shape, the second sub-side portion being spaced apart from thefirst side of the first semiconductor die by a second interval narrowerthan a first interval by which the first sub-side portion is spacedapart from the first side of the first semiconductor die; a secondsemiconductor die stacked on the first semiconductor die and on thesupporter; and an encapsulant layer filling a portion between thesupporter and the first semiconductor die.

An aspect of the present disclosure presents a stack package including:a first semiconductor die disposed on a package substrate; a supporterdisposed on the package substrate and having a second side facing afirst side of the first semiconductor die, the second side including afirst sub-side portion and a second sub-side portion, the first sub-sideportion being an inclined surface spaced apart from the first side ofthe first semiconductor die by a first interval gradually narrowing, andthe second sub-side portion being spaced parallel to the first side by asecond interval narrower than the first interval; a second semiconductordie stacked on the first semiconductor die and on the supporter; and anencapsulant layer filling a portion between the supporter and the firstsemiconductor die.

Another aspect of the present invention presents a stack packageincluding: a first semiconductor die disposed on a package substrate; asupporter disposed on the package substrate and having a second sidefacing a first side of the first semiconductor die, wherein the secondside of the supporter is variably configured; a second semiconductor diestacked on the first semiconductor die and on the supporter; and anencapsulant layer filling a portion between the supporter and the firstsemiconductor die.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view illustrating a stack package accordingto an embodiment of the present disclosure.

FIG. 2 is a schematic plan view illustrating an arrangement shape of asupporter of the stack package of FIG. 1 .

FIGS. 3 and 4 are schematic cross-sectional views illustratingcross-sectional shapes of the stack package of FIG. 1 .

FIG. 5 is a schematic plan view illustrating a planar arrangement shapeof location marks of the stack package of FIG. 1 .

FIG. 6 is a schematic plan view illustrating a stack package accordingto an embodiment of the present disclosure.

FIG. 7 is a schematic side view of the stack package of FIG. 6 viewedfrom one side direction.

FIG. 8 is a schematic plan view illustrating a stack package accordingto an embodiment of the present disclosure.

FIG. 9 is a schematic cross-sectional view illustrating across-sectional shape of the stack package of FIG. 8 .

FIG. 10 is a schematic plan view illustrating a stack package accordingto an embodiment of the present disclosure.

FIG. 11 is a schematic plan view illustrating an arrangement shape of asupporter of the stack package of FIG. 10 .

FIG. 12 is a schematic cross-sectional view illustrating across-sectional shape of the stack package of FIG. 10 .

FIG. 13 is a schematic side perspective view of the stack package ofFIG. 10 viewed from one side.

FIG. 14 is a schematic plan view illustrating a stack package accordingto an embodiment of the present disclosure.

FIG. 15 is a schematic plan view illustrating one embodiment of aconfiguration of a supporter of the stack package of FIG. 14 .

FIG. 16 is a block diagram illustrating an electronic system employing amemory card including a package in accordance with an embodiment of thepresent disclosure.

FIG. 17 is a block diagram illustrating an electronic system including apackage according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

The meanings of the terms used in the various embodiments may beconstrued according to commonly understood meanings by one with ordinaryskill in the art to which the embodiments belong. Unless otherwisedefined, the terms used herein have the same meaning as commonlyunderstood by one of ordinary skill in the art to which the embodimentsbelong.

In the description of the examples of the present disclosure, the termssuch as “first” and “second”, “top” and “bottom or lower” are intendedto distinguish the elements, but are not used to limit the elements orto mean specific order. These terms mean a relative positionalrelationship, but do not limit the specific case where another elementis further introduced at or directly in contact with the element. Thesame interpretation may be applied to other expressions describing therelationship between elements.

Hereinafter, various examples of embodiments will be described belowwith reference to the accompanying drawings. Various examples of theembodiments are described herein with reference to cross-sectionalillustrations that are schematic illustrations of the various examplesof the embodiments and intermediate structures. As such, variations fromthe shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,the embodiments should not be construed as limited to the particularshapes of regions illustrated herein but may be construed to includedeviations in shapes that result, for example, from manufacturing. Inthe drawings, lengths and sizes of layers and regions may be exaggeratedfor clarity. Like reference numerals in the drawings may denote likeelements. It will be understood that when an element or layer isreferred to as being “on,” “connected to” or “coupled to” anotherelement or layer, it may be directly on, connected or coupled to theother element or layer or intervening elements or layers may be present.In contrast, when an element is referred to as being “directly on,”“directly connected to” or “directly coupled to” another element orlayer, there are no intervening elements or layers present.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the example of the term “below” may encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein should be interpreted accordingly.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present disclosure.

Embodiments of the present disclosure may be applied to a technicalfield for implementing integrated circuits such as dynamic random-accessmemory (DRAM) devices, phase change random access memory (PcRAM)devices, or resistive random-access memory (ReRAM) devices. In addition,embodiments of the present disclosure may be applied to a technicalfield for implementing memory devices such as static random accessmemory (SRAM) devices, flash memory devices, magnetic random accessmemory (MRAM) devices or ferroelectric random access memory (FeRAM)devices, or a technical field for implementing a logic device in which alogic integrated circuit is integrated. Embodiments of the presentdisclosure may be applied to a technical field for implementing variousproducts requiring fine patterns.

The same reference numerals refer to same elements throughout thespecification. Even though a reference numeral is not mentioned ordescribed with reference to a drawing, the reference numeral may bementioned or described with reference to another drawing. In addition,even though a reference numeral is not shown in a drawing, it may bementioned or described with reference to another drawing.

FIG. 1 is a schematic plan view illustrating a stack package 10according to an embodiment of the present disclosure.

Referring to FIG. 1 , the stack package 10 according to an embodimentmay include a package substrate 100, a first semiconductor die 200, asupporter 300, and a second semiconductor die 400. The firstsemiconductor die 200 and the second semiconductor die 400 may besemiconductor dies in which memory devices are integrated. The firstsemiconductor die 200 and the second semiconductor die 400 may bedifferent types of semiconductor dies. The second semiconductor die 400may have a size different from that of the first semiconductor die 200.The package substrate 100 may be a wiring structure that electricallyconnects the first and second semiconductor dies 200 and 400 to anexternal device. The package substrate 100 may be provided in the formof a printed circuit board (PCB) or an interposer.

The first semiconductor die 200 may be disposed on the package substrate100. The supporter 300 may be disposed on the package substrate 100while being laterally spaced apart from the first semiconductor die 200.The supporter 300 may include a second side 310 facing a first side 201of the first semiconductor die 200, wherein the second side 310 isvariably configured. The variably configured second side 310 of thesupporter may be a substantially inclined surface, for example, asillustrated in FIG. 1 . That is, for example, the substantially inclinedsurface may be uneven or undulating while still being substantiallyinclined. Alternatively, as illustrated in FIG. 15 , the second side 310of the supporter may be partially inclined for a predetermined portion,with a remaining portion being parallel to the first side 4201 of thefirst semiconductor. In yet another embodiment, as illustrated in FIG.11 , the supporter may be in a substantially “L” shape, with the secondside of the supporter that faces the first side of the firstsemiconductor die having a predetermined portion of the second side ofthe supporter being substantially parallel to the first side 3201 of thefirst semiconductor die and a remaining portion of the second side ofthe supporter being substantially perpendicular to the first side 3201of the first semiconductor die. Hence, in addition to other variableconfigurations, the second side 310 of the supporter may be one ofsubstantially inclined with respect to the first side of the secondsemiconductor die as illustrated in FIG. 1 , partially inclined to thefirst side of the first semiconductor die for a predetermined portionand substantially parallel to the first side 4201 of the firstsemiconductor die for a remaining portion as illustrated in FIG. 15 ,and in a substantially “L” shape, with the second side of the supporterthat faces the first side of the first semiconductor die having apredetermined portion of the second side of the supporter beingsubstantially parallel to the first side 3201 of the first semiconductordie and a remaining portion of the second side of the supporter beingsubstantially perpendicular to the first side 3201 of the firstsemiconductor die as illustrated in FIG. 11 . The second side 310 of thesupporter 300 may be a side extending along an inclination direction D.The inclination direction D may be a direction extending between theX-axis direction and the Y-axis direction orthogonal thereto in the X-Yplane. The inclination direction D may be a direction having an anglegreater than 0 degree (°) and less than 90 degrees (°) with respect tothe X-axis direction. The first side 201 of the first semiconductor die200 may be a side extending along the X-axis direction. The supporter300 and the first semiconductor die 200 may be disposed at the sameheight level on the package substrate 100. The second semiconductor die400 may be stacked while straddling the first semiconductor die 200 andthe supporter 300 together. The second semiconductor die 400 may besupported by the first semiconductor die 200 and the supporter 300together. The second semiconductor die 400 may contact the firstsemiconductor die 200 and the supporter 300 at the same time.

FIG. 2 is a schematic plan view illustrating an embodiment of aconfiguration of the supporter 300 of the stack package 10 of FIG. 1 .

Referring to FIG. 2 , the first side 201 of the first semiconductor die200 is a flat side, and the second side 310 of the supporter is aninclined surface. The inclined surface may be a side extending along adirection between an X-axis and a Y-axis in an X-Y plane. The first side201 of the first semiconductor die 200 may extends along the X-axis. Thefirst side 201 of the first semiconductor die 200 may be a side that isparallel to the X-axis direction and orthogonal to the Y-axis direction.Because the second side 310 of the supporter 300 is an inclined surfaceextending along the inclination direction D, the second side 310 may beextended to intersect with the X-axis or the Y-axis. In other words, theseparation distance between the first side 201 of the firstsemiconductor die 200 and the second side 310 of the supporter 300 mayincrease substantially constantly or decrease substantially constantlyalong the first side 201 of the first semiconductor die 200. The secondside 310 of the supporter 300 may include a first sub-side portion 311and a second sub-side portion 312.

The first sub-side portion 311 of the second side 310 may be positionedto be spaced apart from the first side 201 of the first semiconductordie 200 by a first interval W1. The second sub-side portion 312 of thesecond side 310 of the supporter 300 may be spaced apart from the firstside 201 of the first semiconductor die 200 by a second interval W2. Thesecond interval W2 may be relatively narrower than the first intervalW1. In this way, the second side 310 of the supporter 300 may have aninclined surface whose separation distance may be substantiallyuniformly increased when traveling from the second interval W2 to thefirst interval W1.

The supporter 300 may have a triangular shape or a triangular plateshape including the second side 310, a third side 330, and a fourth side350. The third side 330 of the supporter 300 may be a side connected tothe second side 310, and the fourth side 350 may be a side connectingthe second side 310 and the third side 330. The supporter 300 may bedisposed next to the first semiconductor die 200 so that the fourth side350 of the supporter 300 may be substantially parallel to the first side201 of the first semiconductor die 200. The supporter 300 and the firstsemiconductor die 200 may be disposed so that the extension line of thesecond side 310 of the supporter 300 and the extension line of the firstside 201 of the first semiconductor die 200 cross each other whileforming an angle of less than 90 degrees (°).

The supporter 300 may be a kind of semiconductor die cut and separatedfrom a semiconductor wafer. In an embodiment, the supporter 300 mayfurther include a dielectric material or an insulating material. Thesupporter 300 may be a dummy die. When the supporter 300 is made of asemiconductor material, the supporter 300 may have a thermal expansioncoefficient similar to or substantially the same as that of the secondsemiconductor die 400 or that of the first semiconductor die 200.Accordingly, it is possible to substantially reduce or suppress thestress caused by the difference in thermal expansion coefficient betweenthe semiconductor dies 200 and 400 and the supporter 300 in the stackpackage 10. Accordingly, thermal stability of the stack package 10 maybe improved.

FIGS. 3 and 4 are schematic cross-sectional views illustrating the stackpackage 10 of FIG. 1 . Specifically, FIG. 3 schematically illustrates across-sectional shape of the stack package 10 along a cutting linepassing through the first sub-side portion 311 of the supporter 300 ofFIG. 2 . FIG. 4 schematically illustrates another cross-sectional shapeof the stack package 10 along a cutting line passing through the secondsub-side portion 312 of the supporter 300 of FIG. 2 .

Referring to FIGS. 3, 4, and 2 , the stack package 10 according to anembodiment may further include an encapsulant layer 500 that convers andprotects the first semiconductor die 200, the supporter 300, and thesecond semiconductor die 400 on the package substrate 100. Theencapsulant layer 500 may be formed by a molding process using an epoxymolding compound (EMC).

The encapsulant forming the encapsulant layer 500 in the molding processmay flow between the first semiconductor die 200 and the supporter 300to fill a separation space 390 between the first semiconductor die 200and the supporter 300. Because the second semiconductor die 400 isdisposed so as to straddle the first semiconductor die 200 and thesupporter 300, the separation space 390 may overlap with the secondsemiconductor die 400 and might not be exposed. Accordingly, theencapsulant may flow from the portion of the package substrate 100 thatdoes not overlap with the second semiconductor die 400 in a directionparallel to the substrate surface to fill the separation space 390.

The encapsulant may flow along a first flow direction (F1 in FIG. 2 )from a portion where the first interval W1 is located to another portionwhere the second interval W2 is located to fill the separation space390. The encapsulant may flow along a second flow direction (F2 in FIG.2 ) from the portion where the second interval W2 is located to theportion where the first interval W1 is located to fill the separationspace 390.

Because the first interval W1 is relatively wider than the secondinterval W2, the encapsulant may flow into or flow out smoothly withoutbeing substantially stagnated around the first sub-side portion 311where the first interval W1 is located. Filling defects in which voidsare trapped in the encapsulant layer 500 around the first sub-sideportion 311 may be substantially prevented, reduced, or suppressed. Theflowable encapsulant may flow along the slope of the inclined surface ofthe second side 310. The encapsulant may flow into the separation space390 while maintaining a stable flow without actual occurrence ofturbulence. Accordingly, the encapsulant may substantially fill theseparation space 390 between the first semiconductor die 200 and thesupporter 300 without generating voids.

The second interval W2 may correspond to a relatively narrow separationdistance, but the second sub-side portion 312 providing the secondinterval W2 may be limited to have a shorter length than the entiresecond side 310. Because the second sub-side portion 312 is limited tohave a relatively short length, the encapsulant may flow smoothly fromthe separation space 390 near the second sub-side portion 312 withoutstagnation despite the narrow second interval W2. As such, because thesecond sub-side portion 312 is limited to have a relatively short lengthwith respect to the second side 310, the stagnation of the flow of theencapsulant in the vicinity of the second sub-side portion 312 may besubstantially prevented, reduced, or suppressed. Because the encapsulantin the vicinity of the second sub-side portion 312 may flow into or flowout smoothly, filling defects in which voids are trapped in theencapsulant layer 500 around the second sub-side portion 312 may besubstantially prevented, reduced, or suppressed.

FIG. 5 is a schematic plan view illustrating a planar shape in whichpositioning marks 152 and 153 are disposed on the package substrate 100of the stack package 10 of FIG. 1 .

Referring to FIG. 5 , first positioning marks 152 and second positioningmarks 153 may be disposed on the package substrate 100. The firstpositioning marks 152 may be provided as patterns indicating a locationwhere the first semiconductor die 200 is to be disposed when the firstsemiconductor die 200 is mounted on the package substrate 100. The firstpositioning marks 152 may be disposed around corner portions 202 of thefirst semiconductor die 200. The second positioning marks 153 may beprovided as patterns indicating a location where the supporter 300 is tobe disposed when the supporter 300 is mounted on the package substrate100. The second positioning marks 153 may be disposed around cornerportions 303 of the supporter 300. The second positioning marks 153 maybe disposed around a corner portion where the second side 310 and thethird side 330 of the supporter 300 meet, a corner portion where thethird side 330 and the fourth side 350 meet, and a corner portion wherethe second side 310 and the fourth side 350 are connected. Thepositioning marks 152 and 153 may be provided as patterns of across-shape or a bracket-shape.

FIG. 6 is a schematic plan view illustrating a stack package 11according to an embodiment of the present disclosure. FIG. 7 is aschematic side view of the stack package 11 of FIG. 6 viewed fromdirection “A”.

Referring to FIGS. 6 and 7 , the stack package 11 according to anembodiment may include a package substrate 1100, a first semiconductordie 1200, a supporter 1300, and a second semiconductor die 1400. Thestack package 11 may further include an encapsulant layer 1500 thatencapsulates the first semiconductor die 1200, the supporter 1300, andthe second semiconductor die 1400 on the package substrate 1100. Thesecond semiconductor die 1400 may be stacked while straddling the firstsemiconductor die 1200 and the supporter 1300 together.

The supporter 1300 may have a shape in which a second side 1310 facing afirst side 1201 of the first semiconductor die 1200 includes an inclinedsurface. The second side 1310 of the supporter 1300 may include a firstsub-side portion 1311 and a second sub-side portion 1312. The firstsub-side portion 1311 of the supporter 1300 may be spaced apart from thefirst side 1201 of the first semiconductor die 1200 by a first intervalW11, and the second sub-side portion 1312 of the supporter 1300 may bespaced apart from the first side 1201 of the first semiconductor die1200 by a second interval W12 that is narrower than the first intervalW11. The supporter 1300 may further include a third side 1330 and afourth side 1350. The fourth side 1350 of the supporter 1300 may be aside substantially parallel to the first side 1201 of the firstsemiconductor die 1200. The third side 1330 of the supporter 1300 may bea side connecting the fourth side 1350 and the second side 1310. Thesupporter 1300 may have a shape of a triangular plate.

The second semiconductor die 1400 may include first bonding pads 1410.The first bonding pads 1410 may be arranged at a first edge portion1400E of the second semiconductor die 1400. The first bonding pads 1410of the second semiconductor die 1400 may be connecting terminals thatelectrically connect an integrated circuit integrated in the secondsemiconductor die 1400 to the package substrate 1100. The first edgeportion 1400E of the second semiconductor die 1400 may be overlappedwith the supporter 1300 disposed under the second semiconductor die1400. The second semiconductor die 1400 may be disposed so that thefirst bonding pads 1410 overlap with the supporter 1300. The first edgeportion 1400E of the second semiconductor die 1400 may include a regionof the second semiconductor die 1400, adjacent to the third side 1330 ofthe supporter 1300. The first edge portion 1400E of the secondsemiconductor die 1400 may be further extended to be overlapped with thefirst semiconductor die 1200 disposed under the second semiconductor die1400. The first bonding pads 1410 may be arranged in a row in the firstedge portion 1400E of the second semiconductor die 1400.

First bonding fingers 1140 respectively corresponding to the firstbonding pads 1410 may be arranged on the package substrate 1100. Firstbonding wires 1840 may electrically and physically connect the firstbonding pads 1410 to the first bonding fingers 1140. Each of the firstbonding wires 1840 may be bonded to each of the first bonding pads 1410through a wire bonding process. In order to bond an end of the firstbonding wire 1840 to the first bonding pad 1410, a process of pressingan end of the first bonding wire 1840 against the first bonding pad 1410may be involved. In the press bonding process, pressure may be appliedto first bonding pads 1410 that are disposed on a portion of the secondsemiconductor die 1400.

If the portion where the first bonding pads 1410 of the secondsemiconductor die 1400 are located is not supported by the supporter1300, the portion where the first bonding pads 1410 of the secondsemiconductor die 1400 are located may be pressed and deflected by thepressing pressure. As such, as the portion of the second semiconductordie 1400 where the first bonding pads are located is deflected, abonding failure may occur in which the first bonding wires are notsubstantially connected to the first bonding pads.

A third edge portion 1300E of the supporter 1300 may be overlapped witha first edge portion 1400E of the second semiconductor die 1400, and thefirst bonding pads 1410 may be supported by the third edge portion 1300Eof the supporter 1300. When performing the wire bonding process forforming the first bonding wires 1840, the first bonding pads 1410 may besupported by the third edge portion 1300E of the supporter 1300.Accordingly, it is possible to substantially prevent, reduce, orsuppress the occurrence of bending of a part of the second semiconductordie 1400 during the wire bonding process or occurrence of bondingfailures. The third edge portion 1300E of the supporter 1300 may be aregion overlapping with the first edge portion 1400E of the secondsemiconductor die 1400. The third edge portion 1300E of the supporter1300 may be a region adjacent to the third side 1330 of the supporter1300.

The first semiconductor die 1200 may include third bonding pads 1210arranged in a fifth edge portion 1200E. The package substrate 1100 mayinclude third bonding fingers 1120 corresponding to the third bondingpads 1210. Third bonding wires 1820 may electrically and physicallyconnect the third bonding pads 1210 to the third bonding fingers 1120,respectively.

FIG. 8 is a schematic plan view illustrating a stack package 12according to an embodiment of the disclosure. FIG. 9 illustrates aschematic cross-sectional shape along a cut line passing through a firstsub-side portion 2311 of a supporter 2300 of the stack package 12 ofFIG. 8 .

Referring to FIGS. 8 and 9 , the stack package 12 according to anembodiment may include a package substrate 2100, a first semiconductordie 2200, a supporter 2300, and a second semiconductor die 2400. Thestack package 12 may further include an encapsulant layer 2500 thatencapsulates the first semiconductor die 2200, the supporter 2300, andthe second semiconductor die 2400 on the package substrate 2100. Thesecond semiconductor die 2400 may be stacked while straddling the firstsemiconductor die 2200 and the supporter 2300 together.

The supporter 2300 may have a shape in which a second side 2310 facing afirst side 2201 of the first semiconductor die 2200 includes an inclinedsurface. The second side 2310 of the supporter 2300 may include a firstsub-side portion 2311 and a second sub-side portion 2312. The firstsub-side portion 2311 of the supporter 2300 may be spaced apart from thefirst side 2201 of the first semiconductor die 2200 by a first intervalW21, and the second sub-side portion 2312 may be spaced apart from thefirst side 2201 of the first semiconductor die 2200 by a second intervalW22 that is narrower than the first interval W21. A fourth side 2350 ofthe supporter 2300 may be a side substantially parallel to the firstside 2201 of the first semiconductor die 2200, and a third side 2330 ofthe supporter 2300 may be a side connecting the fourth side 2350 and thesecond side 2310. The supporter 2300 may have a shape of a triangularplate.

The second semiconductor die 2400 may include first bonding pads 2410arranged in a first edge portion 2400E of the second semiconductor die2400. The first edge portion 2400E of the second semiconductor die 2400may include a region of the second semiconductor die 2400, adjacent tothe third side 2330 of the supporter 2300. As the first edge portion2400E of the second semiconductor die 2400 is partially overlapped withthe supporter 2300, the first bonding pads 2410 may be supported by thesupporter 2300. The first bonding pads 2410 may be supported by a thirdedge portion 2300E of the supporter 2300.

First bonding fingers 2140 respectively corresponding to the firstbonding pads 2410 may be arranged on the package substrate 2100. Firstbonding wires 2840 may be disposed to respectively connect the firstbonding pads 2410 to the first bonding fingers 2140 electrically andphysically.

The second semiconductor die 2400 may further include second bondingpads 2412 arranged in a second edge portion 2400E-1 of the secondsemiconductor die 2400. As the second edge portion 2400E-1 of the secondsemiconductor die 2400 is overlapped with another portion of thesupporter 2300, the second bonding pads 2412 may be supported by thesupporter 2300. The second bonding pads 2412 may be supported by afourth edge portion 2300E-1 of the supporter 2300.

The second edge portion 2400E-1 of the second semiconductor die 2400 mayinclude a region of the second semiconductor die 2400, adjacent to thefourth side 2350 of the supporter 2300. The second edge portion 2400E-1of the second semiconductor die 2400 may be a region orthogonal to thefirst edge portion 2400E. The second edge portion 2400E-1 of the secondsemiconductor die 2400 may be overlapped with the fourth edge portion2300E-1 that is another portion of the supporter 2300. The fourth edgeportion 2300E-1 of the supporter 2300 may include a region of thesupporter 2300, adjacent to the fourth side 2350.

Second bonding fingers 2142 respectively corresponding to the secondbonding pads 2412 may be disposed on the package substrate 2100. Secondbonding wires 2842 may be disposed to respectively connect the secondbonding pads 2412 and the second bonding fingers 2142 electrically andphysically.

Because the first bonding pads 2410 may be supported while beingoverlapped with the third edge portion 2300E of the supporter 2300, andthe second bonding pads 2412 may be supported while being overlappedwith the fourth edge portion 2300E-1 of the supporter 2300, it ispossible to substantially prevent, reduce, or suppress the occurrence ofbonding failure in the wire bonding process used to form the first andsecond bonding wires 2840 and 2842.

The first semiconductor die 2200 may include third bonding pads 2210arranged in a fifth edge portion 2200E. The package substrate 2100 mayinclude third bonding fingers 2120 respectively corresponding to thethird bonding pads 2210. Third bonding wires 2820 may respectivelyconnect the third bonding pads 2210 to the third bonding fingers 2120electrically and physically.

FIG. 10 is a schematic plan view illustrating a stack package 13according to an embodiment of the present disclosure. FIG. 11 is aschematic plan view illustrating an arrangement shape of a supporter3300 of the stack package 13 of FIG. 10 . FIG. 12 is a schematiccross-sectional view illustrating a cross-sectional shape of the stackpackage 13 along a cut line passing through a first supporter bodyportion 3321 of the supporter 3300 of FIG. 10 . FIG. 13 is a schematicside perspective view of the stack package 13 of FIG. 10 viewed from adirection “B”.

Referring to FIGS. 10 and 11 , the stack package 13 according to anembodiment may include a package substrate 3100, a first semiconductordie 3200, a supporter 3300, and a second semiconductor die 3400.Referring to FIGS. 12 and 13 , the stack package 13 may further includean encapsulant layer 3500 that encapsulates the first semiconductor die3200, the supporter 3300, and the second semiconductor die 3400 on thepackage substrate 3100. The second semiconductor die 3400 may be stackedwhile straddling the first semiconductor die 3200 and the supporter 3300together.

Referring to FIGS. 10 and 11 , in a side view, the supporter may have ashape in which a second side 3310 facing a first side 3201 of the firstsemiconductor die 3200 forms a staircase shape. The second side 3310 ofthe supporter 3300 may have a first sub-side portion 3311 and a secondsub-side portion 3312. The first sub-side portion 3311 of the supporter3300 may be spaced apart from a first side 3201 of the firstsemiconductor die 3200 by a relatively wide first interval W31, and thesecond sub-side portion 3312 may be spaced apart from the first side3201 of the first semiconductor die 3200 by a second interval W32 thatis narrower than the first interval W31.

The supporter 3300 may include a first supporter body portion 3321 and asecond supporter body portion 3322. The first sub-side portion 3311 maybe one side of the first supporter body portion 3321 and may be locatedto face the first side 3201 of the first semiconductor die 3200. Thesecond sub-side portion 3312 may be one side of the second supporterbody portion 3322 and may be positioned to face the first side 3201 ofthe first semiconductor die 3200. The second supporter body portion 3322may protrude from the first supporter body portion 3321 toward the firstsemiconductor die 3200, so that the first sub-side portion 3311 and thesecond sub-side portion 3312 may form a lateral shape of a staircaseshape. The second supporter body portion 3322 and the first supporterbody portion 3321 may make the supporter 3300 have an “L”-shaped plateshape.

The supporter 3300 may include a fourth side 3350 that is substantiallyparallel to the first side 3201 of the first semiconductor die 3200, andmay include a third side 3330 connecting the fourth side 3350 and thesecond side 3310.

Referring to FIGS. 10 and 13 , the second semiconductor die 3400 mayinclude first bonding pads 3410 disposed at a first edge portion 3400Eof the second semiconductor die 3400. The first edge portion 3400E ofthe second semiconductor die 3400 may include a region of the secondsemiconductor die 3400, adjacent to the third side 3330 of the supporter3300. As the first edge portion 3400E of the second semiconductor die3400 is overlapped with the second supporter body portion 3322, which isa portion of the supporter 3300, the first bonding pads 3410 may besupported by the second supporter body portion 3322.

First bonding fingers 3140 respectively corresponding to the firstbonding pads 3410 may be arranged on the package substrate 3100. Firstbonding wires 3840 may be disposed to respectively connect the firstbonding pads 3410 to the first bonding fingers 3140 electrically andphysically.

Referring to FIGS. 10 and 12 , the second semiconductor die 3400 mayfurther include second bonding pads 3412 disposed in a second edgeportion 3400E-1 of the second semiconductor die 3400. The second edgeportion 3400E-1 of the second semiconductor die 3400 may be a regionadjacent to the fourth side 3350 of the supporter 3300. As the secondedge portion 3400E-1 of the second semiconductor die 3400 overlaps thefirst supporter body portion 3321, which is another portion of thesupporter 3300, the second bonding pads 3412 may be supported by thefirst supporter body portion 3321.

Second bonding fingers 3142 respectively corresponding to the secondbonding pads 3412 may be arranged on the package substrate 3100. Secondbonding wires 3842 may be disposed to respectively connect the secondbonding pads 3412 to the second bonding fingers 3142 electrically andphysically.

Because the first bonding pads 3410 may be supported while beingoverlapped with the second supporter body portion 3322, and the secondbonding pads 3412 may be supported while being overlapped with the firstsupporter body portion 3321, the occurrence of bonding failure may besubstantially prevented, reduced, or suppressed in the wire bondingprocess that forms the first and second bonding wires 3820 and 3842.

The first semiconductor die 3200 may include third boding pads 3210arranged in a fifth edge portion 3200E. The package substrate 3100 mayinclude third bonding fingers 3120 respectively corresponding to thethird bonding pads 3210. Third bonding wires 3820 may respectivelyconnect the third bonding pads 3210 to the third bonding fingers 3120electrically and physically.

Referring to FIGS. 11, 12, and 13 , the encapsulant that forms theencapsulant layer 3500 in the molding process may flow between the firstsemiconductor die 3200 and the supporter 3300 to fill the separationspace 3390 between the first semiconductor die 3200 and the supporter3300. The first sub-side portion 3311 of the first supporter bodyportion 3321 and the first side 3201 of the first semiconductor die 3200may be spaced apart from each other by a relatively wide first intervalW31. Accordingly, it is possible to substantially prevent, reduce, orsuppress voids from being trapped between the first supporter bodyportion 3321 and the first semiconductor die 3200. The second sub-sideportion 3312 of the second supporter body portion 3322 and the firstside 3201 of the first semiconductor die 3200 may be spaced apart fromeach other by a second interval W32 that is narrower than the firstinterval W31. However, the second sub-side portion 3312 may have asignificantly shorter length than the first sub-side portion 3311.Accordingly, stagnation of the flow of the encapsulant around the secondsub-side portion 3312 may be substantially prevented, reduced, orsuppressed. It is possible to substantially prevent, reduce, or suppressvoids from being trapped in the encapsulant layer 3500 around the secondsub-side portion 3312.

FIG. 14 is a schematic plan view illustrating a stack package 14according to an embodiment of the disclosure. FIG. 15 is a schematicplan view illustrating one embodiment of a configuration of a supporter4300 of the stack package 14 of FIG. 14 .

Referring to FIGS. 14 and 15 , the stack package 14 according to anembodiment may include a package substrate 4100, a first semiconductordie 4200, a supporter 4300, and a second semiconductor die 4400. Thestack package 14 may further include an encapsulant layer (notillustrated) that encapsulates the first semiconductor die 4200, thesupporter 4300, and the second semiconductor die 4400 on the packagesubstrate 4100. The second semiconductor die 4400 may be stacked whilestraddling the first semiconductor die 4200 and the supporter 4300together.

The supporter 4300 may include a second side 4310 facing a first side4201 of the first semiconductor die 4200, and the second side 4310 mayinclude a first sub-side portion 4311 and a second sub-side portion4312. The first sub-side portion 4311 of the supporter 4300 may includean inclined surface such that a first interval W41 with the first side4201 of the first semiconductor die 4200 gradually narrows or increasessubstantially constantly. The second sub-side portion 4312 of thesupporter 4300 may be a side having a second interval W42 with the firstside 4201 of the first semiconductor die 4200 being narrower than thefirst interval W41. The second sub-side portion 4312 of the supporter4300 may be a side substantially parallel to and spaced apart from thefirst side 4201 of the first semiconductor die 4200.

The supporter 4300 may include a fourth side 4350 that is substantiallyparallel to the first side 4201 of the first semiconductor die 4200, andmay include a third side 4330 connecting the fourth side 4350 and thesecond sub-side portion 4312. The supporter 4300 may have a shape of atrapezoidal plate.

The second semiconductor die 4400 may include first bonding pads 4410arranged in a first edge portion 4400E of the second semiconductor die4400. The first edge portion 4400E of the second semiconductor die 4400may include a region of the second semiconductor die 4400, adjacent tothe third side 4330 of the supporter 4300. As the first edge portion4400E of the second semiconductor die 4400 is overlapped with a portionthe supporter 4300, the first bonding pads 4410 may be supported by thesupporter 4300.

First bonding fingers 4140 respectively corresponding to the firstbonding pads 4410 may be arranged on the package substrate 4100. Firstbonding wires 4840 may be disposed to respectively connect the firstbonding pads 4410 to the first bonding fingers 4140 electrically andphysically.

The second semiconductor die 4400 may further include second bondingpads 4412 arranged in a second edge portion 4400E-1 of the secondsemiconductor die 4400. The second edge portion 4400E-1 of the secondsemiconductor die 4400 may be a region adjacent to the fourth side 4350of the supporter 4300. As the second edge portion 4400E-1 of the secondsemiconductor die 4400 is overlapped with another portion of thesupporter 4300, the second bonding pads 4412 may be supported by thesupporter 4300.

Second bonding fingers 4142 respectively corresponding to the secondbonding pads 4412 may be arranged on the package substrate 4100. Secondbonding wires 4842 may be disposed to respectively connect the secondbonding pads 4412 to the second bonding fingers 4142 electrically andphysically.

Because the first bonding pads 4410 and the second bonding pads 4412 maybe supported while being overlapped with some portions of the supporter4300, the occurrence of bonding failure may be substantially prevented,reduced, or suppressed in the wire bonding process to form the first andsecond bonding wires 4840 and 4842.

The first semiconductor die 4200 may include third bonding pads 4210arranged in a fifth edge portion 4200E. The package substrate 4100 mayinclude third bonding fingers 4120 corresponding to the third bondingpads 4210. Third bonding wires 4820 may respectively connect the thirdbonding pads 4210 to the third bonding fingers 4120 electrically andphysically.

Referring to FIG. 15 , an encapsulant forming the encapsulant layer inthe molding process may be introduced between the first semiconductordie 4200 and the supporter 4300, filling a separation space 4390 betweenthe first semiconductor die 4200 and the supporter 4300. The firstsub-side portion 4311 of the supporter 4300 may be an inclined surface,and the first side 4201 of the first semiconductor die 4200 may bespaced apart by a relatively wide first interval W41. Accordingly, it ispossible to substantially prevent, reduce, and suppress voids from beingtrapped between the first sub-side portion 4311 and the firstsemiconductor die 4200. The second sub-side portion 4312 of thesupporter 4300 and the first side 4201 of the first semiconductor die4200 may be separated by a second interval W42 that is narrower than thefirst interval W41, but the second sub-side portion 4312 may have asignificantly shorter length than the first sub-side portion 4311.Accordingly, stagnation of the flow of the encapsulant around the secondsub-side portion 4312 may be substantially prevented, reduced, orsuppressed. It is possible to substantially prevent, reduce, or suppressvoids from being trapped in the encapsulant layer around the secondsub-side portion 4312.

FIG. 16 is a block diagram illustrating an electronic system including amemory card 7800 employing at least one of the semiconductor packagesaccording to the embodiments. The memory card 7800 may include a memory7810 such as a nonvolatile memory device, and a memory controller 7820.The memory 7810 and the memory controller 7820 may store data or readout the stored data. At least one of the memory 7810 and the memorycontroller 7820 may include at least one of the semiconductor packagesaccording to the embodiments.

The memory 7810 may include a nonvolatile memory device to which thetechnology of the embodiments of the present disclosure is applied. Thememory controller 7820 may control the memory 7810 such that stored datais read out or data is stored in response to a read/write request from ahost 7830.

FIG. 17 is a block diagram illustrating an electronic system 8710including at least one of the semiconductor packages according to theembodiments. The electronic system 8710 may include a controller 8711,an input/output device 8712, and a memory 8713. The controller 8711, theinput/output device 8712, and the memory 8713 may be coupled with oneanother through a bus 8715 providing a path through which data move.

In an embodiment, the controller 8711 may include one or moremicroprocessor, digital signal processor, microcontroller, and/or logicdevice capable of performing the same functions as these components. Thecontroller 8711 or the memory 8713 may include at least one of thesemiconductor packages according to the embodiments of the presentdisclosure. The input/output device 8712 may include at least oneselected from among a keypad, a keyboard, a display device, atouchscreen and so forth. The memory 8713 is a device for storing data.The memory 8713 may store data and/or commands to be executed by thecontroller 8711, and the like.

The memory 8713 may include a volatile memory device such as a DRAMand/or a nonvolatile memory device such as a flash memory. For example,a flash memory may be mounted to an information processing system suchas a mobile terminal or a desktop computer. The flash memory mayconstitute a solid state disk (SSD). In this case, the electronic system8710 may stably store a large amount of data in a flash memory system.

The electronic system 8710 may further include an interface 8714configured to transmit and receive data to and from a communicationnetwork. The interface 8714 may be a wired or wireless type. Forexample, the interface 8714 may include an antenna or a wired orwireless transceiver.

The electronic system 8710 may be realized as a mobile system, apersonal computer, an industrial computer, or a logic system performingvarious functions. For example, the mobile system may be any one of apersonal digital assistant (PDA), a portable computer, a tabletcomputer, a mobile phone, a smart phone, a wireless phone, a laptopcomputer, a memory card, a digital music system and an informationtransmission/reception system.

If the electronic system 8710 is an equipment capable of performingwireless communication, the electronic system 8710 may be used in acommunication system using a technique of CDMA (code division multipleaccess), GSM (global system for mobile communications), NADC (northAmerican digital cellular), E-TDMA (enhanced-time division multipleaccess), WCDMA (wideband code division multiple access), CDMA2000, LTE(long term evolution) or Wibro (wireless broadband Internet).

The inventive concept has been disclosed in conjunction with someembodiments as described above. Those skilled in the art will appreciatethat various modifications, additions and substitutions are possible,without departing from the scope and spirit of the present disclosure.Accordingly, the embodiments disclosed in the present specificationshould be considered from not a restrictive standpoint but anillustrative standpoint. The scope of the inventive concept is notlimited to the above descriptions but defined by the accompanyingclaims, and all of distinctive features in the equivalent scope shouldbe construed as being included in the inventive concept.

What is claimed is:
 1. A stack package comprising: a first semiconductordie disposed over a package substrate; a supporter disposed over thepackage substrate and having a second side facing a first side of thefirst semiconductor die, the second side having a substantially inclinedsurface; a second semiconductor die stacked over the first semiconductordie and over the supporter; and an encapsulant layer filling a portionbetween the supporter and the first semiconductor die, wherein theinclined surface is a side extending along a direction between an X-axisand a Y-axis in an X-Y plane; and wherein the first side of the firstsemiconductor die extends along the X-axis.
 2. The stack package ofclaim 1, wherein a distance between the first side of the firstsemiconductor die and the second side of the supporter increases ordecreases along the first side of the first semiconductor die by thesubstantially inclined surface.
 3. The stack package of claim 1, whereinthe second side comprises: a first sub-side portion spaced apart fromthe first side by a first interval; and a second sub-side portion spacedapart from the first side by a second interval narrower than the firstinterval.
 4. The stack package of claim 1, wherein the supporter has ashape of a triangular plate.
 5. The stack package of claim 1, whereinthe supporter comprises a third side connected to the second side, and afourth side connecting the third side and the second side, and whereinthe fourth side is parallel to the first side of the first semiconductordie.
 6. The stack package of claim 5, wherein the second semiconductordie further comprises first bonding pads disposed in a first edgeportion of the second semiconductor die, adjacent to the third side ofthe supporter, first bonding wires being bonded to the first bondingpads, and wherein the supporter is disposed so that a portion of thesupporter overlaps with the first bonding pads.
 7. The stack package ofclaim 5, wherein the second semiconductor die further comprises secondbonding pads disposed in a second edge portion of the secondsemiconductor die, adjacent to the fourth side of the supporter, secondbonding wires being bonded to the second bonding pads, and wherein thesupporter is disposed so that another portion of the supporter overlapswith the second bonding pads.
 8. The stack package of claim 5, whereinthe package substrate further comprises positioning marks that aredisposed around corner portions connecting the second side and the thirdside of the supporter, the third side and the fourth side, and thesecond side and the fourth side to indicate a placement location of thesupporter.
 9. The stack package of claim 1, wherein the secondsemiconductor die comprises bonding pads disposed in an edge portion,bonding wires being bonded thereto, and wherein the supporter isdisposed so that a portion of the supporter overlaps with the bondingpads.
 10. The stack package of claim 1, wherein the supporter comprisessemiconductor material.
 11. The stack package of claim 1, wherein thesecond semiconductor die has a different size from the firstsemiconductor die.